Crucial have today debuted their next-gen DDR4 DRAM modules at CES 2013.
Operating at 1.2V compared to DDR3’s 1.3-1.5v (up to 20 percent lower than previous technology), the new modules already run at clock speeds twice as fast as DDR3 speeds (2133 MHz vs. 1066 MHz), and will offer increased bandwidth and higher density memory that is less of a power drain in ultrabooks and mobile devices.
“With DDR4 data rates already twice that of DDR3 when it was introduced, Crucial Ballistix is the ideal showcase for Micron’s latest generation of DRAM,” said Jim Jardine, director of DRAM product marketing, Crucial.
“Other benefits, including reduced voltage compared to DDR3, will make DDR4 an important advancement in memory technology that will benefit computing systems that range from the personal computer to the data centre.”
Expect to see the new modules touch down in stores towards the end of the year. Crucial have alo put together a handy infographic, detailing the differences between the next-gen and previous generation modules, which you can view below:
By Gerald Lynch | January 10th, 2013